Semiconductor diodes based on silicon and gallium arsenide

The availability at RI "Orion" of its own production base with a closed production cycle allows us to develop and produce silicon IMPATT diodes of continuous and pulsed modes of operation, GaAs Gunn diodes, silicon p–i–n diodes and varactors in the frequency range 30–155 GHz. The parameters of all of these diodes are at the level of the best world samples. Production capacity for the manufacture of diodes for millimeter range fully cover the needs of the research Institute "Orion" in the development and manufacture of scientific and technical products of the Institute.

Figure. Photos of silicon IMPATT diodes (a) and GaAs Gunn diodes (b)

In RI "Orion" a technological line is organized on the industrial premises (more 2,000 m²). This line provides a full cycle of manufacturing of microwave diodes, including the assembling of chips with mesa structures into the branded packages; it ensures diode comprehensive testing along with checking of the diode reliability parameters. The company has been conducting research and development aimed at creating a new generation of devices based on advanced semiconductor materials such as InP, GaN.

Technological routes of chips manufacturing are made on the original technology thin (8-12 µm) solid-state membranes. Technological lines ensure compliance with the technological cycle of the diode manufacture in the conditions of production semiconductor hygiene, to be in keeping with the current standards of the industry. To improve the efficiency of a closed technological cycle of development and production of microwave diodes it is carried out the upgrading of production run equipment, aimed at ensuring high repeatability of parameters of technological processes. In addition, it is designed, developed and implemented in production process new original equipment for high-precision assembly of packaged diodes of millimeter range. Taking into account the real demand and timing of orders the upgrading of technological lines has been carried out, focused on reducing energy consumption of technological processes and additions of production line equipment, providing a high degree of autonomy and mobility of production. Industrial equipment for diode assembly in the miniature metal-dielectric packages is designed and manufactured, as well as the equipment and tooling for forming thin silicon membranes and run the process with them on the technological routes of diode manufacturing are designed and produced.

The available technology, advanced technological base and highly skilled creative team ensure the production of silicon packaged IMPATT diodes of continuous and pulsed modes of operation in 8-, 5-, 3-, 2- and 1.5-mm wavelength ranges. High-speed packaged switching diodes can be used in the range of 8–2 mm, and provide the switching time from 1 to 30 nanoseconds at a direct loss resistance 1–3 Ohms. Unpackaged silicon and silicon-carbide high-voltage p–i–n diodes and silicon diodes with beam leads ensure the switching of microwave power in the hybrid IC in the frequency range 1–40 GHz. The parameters of semiconductor diodes are shown below.

Parameters of Si IMPATT diodes of CW mode

Parameters of Si IMPATT diodes of pulsed mode

Designation	УКА 802	УКА 803	УКА 805	УКА 813
Frequency range, GHz	33-37	92-96	135-155	200-240
Pulsed output power, W, not less	20	12	2	0,2
Breakdown voltage, V	35-40	13-16	10,5-12,5	6,5-8,5
Operating current, A	8-15	10-12	2-5	4-6
Microwave pulse duration, not less	100-300	100-150	100-150	50-100
Capacitance at U=0 V, pF	12-22	6-8	2-6	1,5-2,5

Parameters of GaAs Gunn diodes of CW mode

Designation	УАА 702	УАА 701	УАА 705	УАА 708
Frequency range, GHz	30-37,5	41-43	60	94
Output power, mw	50-100	50–70	40–60	5–10
Operating voltage, V	5,5	4,0	5,5	4,0
Operating current, A	0,5–0,6	0,3–0,4	0,2–0,4	0,2–0,3

Parameters of silicon high-speed switching diodes with beam leads

Designation	УКА502 А-1	УКА502 Б-1	УКА502 В-1	УКА502 Г-1
Total capacitance at f=1 MHz, at UR=10 V, pF	0,03-0,04	0,05-0,07	0,08-0,12	0,13-0,20
Reverse d.c. voltage, V, at IR =1 μA, not less	40	40	40	40
Direct resistance losses, Ohm at f=3,5 GHz, at IF=10 mА, no more	2,5	2,0	2,0	2,0
Reverse recovery time, ns at IF = (10±0,1) mА; URМ = (10±0,1) V; τМ = (0,2±0,1) μs, no more	15	15	15	15
Dimensions, mm, no more	0,9х0,28х0,05	0,9х0,28х0,05	0,9х0,28х0,05	0,9х0,28х0,05

Parameters of silicon packaged high speed switching diodes

Frequency range, GHz	33-37	92-96	130-150
Total capacitance at UR=10 V, pF	0,3-0,4	0,10-0,11	0,09-0,10
Switching time, ns	3-10	3-10	3-10
Direct resistance losses at IF=10 mА, Ohm	1-3	1-3	1-3
Breakdown voltage, V, not less	40	40	40